Research Profile
Silicon-germanium in the hexagonal crystal polytype has recently emerged as a new direct bandgap semiconductor promises to become the essential brick that was missing in the silicon industry. Hex-SiGe promises to integrate opto-electronic capabilities into the silicon industry. Research is directed towards a hex-SiGe laser, an optical amplifier, a detector as well as to low-dimensional hex-SiGe semiconductors like quantum wells and dots.
Meet some of our Researchers
Recent Publications
Our most recent peer reviewed publications
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Polarized emission from hexagonal-silicon-germanium nanowires
Journal of Applied Physics (2023) -
Efficient Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars with Growth Controlled Emission Energy
ACS Nano (2022) -
Extremely low material consumption III/V solar cell
(2022) -
Thermodynamics of a nanowire solar cell
(2022) -
Proof of Stimulated Emission in Silicon-Germanium
(2022)
Contact
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Visiting address
Mika Janssen LLBFlux, room 2.108De Groene Loper 195612 AP EindhovenNetherlandsjennifer14@ vanderleek.nl -
Postal address
ir. Jens SamboP.O. Box 5135600 MB EindhovenNetherlandsgkok@ mulder.net -
Postal address
prof. Naud van de Pol BAAlex Dubbeldemuts van der SluysNeuteboomboulevard8711EJ GroedeNetherlandsgmeijer@ hotmail.nl -
SecretaryTwan Hermans Bde Kokbaan4797HE Loo Gldsecretariaat.and@ tue.nl