Selective atomic-scale processing for fabrication of nanoelectronics
It is a long held dream in nanoscience to synthesize materials from the bottom-up with atomic-level control of structure and properties, yet the fabrication of nanoelectronics still relies almost completely on top-down processing. From a technological point-of-view, the motivation for working on bottom-up fabrication is that conventional top-down processing relying on photolithography and etching is reaching its limits in terms of alignment accuracy. Our research focuses on the development of new approaches for area-selective ALD based detailed insights from plasma physics and surface chemistry. Area-selective ALD aims at deposition of material only on surfaces where it is needed, without coating other surfaces of different materials, and thereby enables self-aligned fabrication. In addition, we are exploring other flavors of selective processing such as topographically-selective deposition or atomic-scale cleaning.
Read moreRecent Publications
Our most recent peer reviewed publications
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Ultrathin superconducting TaCxN1-x films prepared by plasma-enhanced atomic layer deposition with ion-energy control
Applied Physics Letters (2023) -
Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3
Journal of Applied Physics (2023) -
MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier
Advanced Materials Interfaces (2023) -
Computational investigation of precursor blocking during area-selective atomic layer deposition using aniline as a small molecule inhibitor
Langmuir (2023) -
Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of Nanodevices
ACS Applied Nano Materials (2022)